http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104051460-B

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-085
filingDate 2013-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104051460-B
titleOfInvention Include the semiconductor devices and its manufacture method of pseudo- isolated gate structure
abstract The invention provides a kind of semiconductor devices for including isolated gate structure, wherein, the device has the first active transistor, the second active transistor, isolated gate structure and the active area below the first active transistor, the second active transistor and isolated gate structure.First active transistor and the second active transistor all have the metal gates of the first conduction type(For example, one kind in n-type and p-type).Isolated gate structure is interposed between the first active transistor and the second active transistor.Isolated gate structure has the metal gates of the second conduction type(For example, the another kind in n-type and p-type).There is also described herein the method for device as preparation.
priorityDate 2013-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 32.