http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104049455-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y10-00 |
| filingDate | 2013-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104049455-B |
| titleOfInvention | Extreme ultraviolet（EUV）Photomask and its manufacture method |
| abstract | The invention provides EUV photomasks and the embodiment of the method for forming EUV photomasks.This method includes：Substrate, reflecting layer, coating, hard mask layer are provided, and form opening wherein.Then, the top face in the opening with hard mask layer fills absorbed layer.Flatening process is provided to remove the absorbed layer for the top face for being located at hard mask layer and form absorber in the opening, wherein, the width at the top of absorber is more than the width of its bottom. |
| priorityDate | 2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.