| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb5746eb832dced6146d31f543e23b29 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2011-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_185d494016f007ad9d90c5c3f2b36d98 |
| publicationDate |
2014-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104040633-A |
| titleOfInvention |
Continuous mesh three dimensional non-volatile storage with vertical select devices |
| abstract |
A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108431978-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106469732-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107482011-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107482011-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111133580-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106469732-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111133580-B |
| priorityDate |
2010-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |