http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104037282-B

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
filingDate 2014-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104037282-B
titleOfInvention Growth AlGaN thin film on a si substrate and its preparation method and application
abstract The invention discloses growth AlGaN thin film on a si substrate, it includes Si substrate and epitaxially grown AlGaN thin film on a si substrate;The crystal orientation of described Si substrate is 0.5 1 ° of inclined 100 direction in 111 faces;Through using pulse laser deposition process growth AlGaN thin film, using metal organic chemical vapor deposition technique growth Al atomic layer, Al atomic layer carried out with the steps such as the selection of nitrogen treatment, substrate and its crystal orientation be prepared from.Described AlGaN thin film is applied in photodetector or LED component.The present invention solves to improve quality, purity and the interface performance of AlGaN thin film while the crack problem of GaN film on Si substrate, and reduces process costs.
priorityDate 2014-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.