http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104037118-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2013-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104037118-B |
| titleOfInvention | Preparation method of semiconductor device |
| abstract | The invention relates to a preparation method of a semiconductor device. The method comprises: providing a semiconductor substrate; successively forming a lamination layer of a barrier layer, a metal aluminum material layer, a stop layer and a mask layer on the semiconductor substrate; patterning the lamination layer to form a first groove; forming a first dielectric layer on the side wall of the first groove, and covering the mask layer; depositing a conductive material to fill the first groove, and flattening to the stop layer; removing the stop layer and the metal aluminum material layer to form a second groove; depositing a second dielectric layer to cover the side wall of the second groove; and depositing a third dielectric layer to fill the second groove, and forming an air gap. According to the invention, the metal aluminum material layer is selected as a sacrifice layer to replace a low-K material layer such that the manufacture cost of the device can be greatly reduced, the technology process is simplified, and the production efficiency and the device yield are improved. |
| priorityDate | 2013-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.