| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e6d67894a893256e5b4d85401e466143 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2815 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2012-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa2bc8b184a632f99b34c34e929f9008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_172a8a6ef35fcafee2bfb96149ec7a2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62d7c1419eaf0216d0ae11489069577f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66ededae8e15ffccee601a53ac543e35 |
| publicationDate |
2014-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104025299-A |
| titleOfInvention |
Self-aligned gate structure for field effect transistor |
| abstract |
A field effect transistor has a substrate with an epitaxial layer, base regions extending from a top of the epitaxial layer into the epitaxial layer, an insulation region having side walls and extending between two base regions on top of the substrate; and a polysilicon gate structure covering the insulation region including the side walls, wherein effective gates are formed by a portion of the polysilicon covering side walls above the base region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114373676-A |
| priorityDate |
2011-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |