| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2013-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104009079-B |
| titleOfInvention |
Vertical tunneling field-effect transistor unit |
| abstract |
The invention discloses a kind of vertical tunneling field-effect transistor (TFET) device.The TFET devices include：Source contact, on source area；Multiple gate contacts, on the planar section of gate stack；And multiple drain contacts, it is arranged on drain region.The source contact of TFET devices is arranged with other two adjacent source contacts of other two TFET devices so that each source contact is all located on an angle in three angles of equilateral triangle. |
| priorityDate |
2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |