http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103998985-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2012-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103998985-B |
| titleOfInvention | The manufacture method of large-scale phase-shift mask and large-scale phase-shift mask |
| abstract | The present invention is provided in a kind of large-scale photomask for the manufacture of liquid crystal panel or EL panels, suitably forms the structure and its manufacture method of the translucent phase-shift mask of fine pattern.And then, there is provided a kind of caused structure at the side peak for suppressing to occur when being exposed pattern using translucent phase-shift mask.Adjacently it is configured with the both sides for forming translucent phase shifting region on the transparent substrate in the pattern of penetrating region, by the scope that the light light transmittance of translucent phase shifting region is set to 4% to 30%, width is set to 1 μm to 5 μm of scope, and realizes the contrast for improving exposure intensity distribution while suppresses structure caused by the peak of side. |
| priorityDate | 2011-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.