http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103996742-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02096 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2014-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103996742-B |
| titleOfInvention | A kind of etching edge method improving crystal-silicon solar cell electrical property |
| abstract | The invention discloses a kind of etching edge method improving crystal-silicon solar cell electrical property, on the premise of the processing step not increasing crystal-silicon solar cell volume production, effectively reduce the damage in etching process, silicon chip edge caused. |
| priorityDate | 2014-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.