| abstract |
The present invention relates to circuit unit that material is produced comprising a ply stress and forming method thereof, a kind of transistor produces material comprising source region, drain region, passage area, gate electrode and a ply stress.The stress produce material provide response act on the stress produce material on signal and can modulation stress.The ply stress produces material and is arranged to provide stress at least passage area.There is provided stress at least passage area be in response to act on the stress produce the signal on material and can modulation.There is provided response act on the stress produce material on signal and can modulation stress the ply stress produce material can also be used in the circuit unit different from transistor, for example, resistor. |