http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103985415-B

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3427
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-34
filingDate 2014-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103985415-B
titleOfInvention Optimization of Non-Volatile Memory Read Thresholds Based on Preserving Drift History
abstract The present invention relates to non-volatile memory read threshold optimization based on preserved drift history. The SSD controller dynamically adjusts the read thresholds in the NVM to reduce errors due to device threshold voltage distribution shifts, thus improving the performance, reliability and/or cost of storage subsystems such as SSDs. Reserve drift clocks use one or more reference pages (or ECC cells or blocks) on one or more NVM chips as read thresholds over time/temperature reference, and use a function of these values as (over time/ temperature) drift measurement. At some initial time, one or more reference pages are programmed and an initial read threshold is measured for each of the one or more reference pages. In some embodiments, the read thresholds are averaged over one or more of: all reference pages on the same chip; and all reference pages in the same one or more chips in an I/O device.
priorityDate 2013-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 22.