http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103972289-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2014-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103972289-B |
| titleOfInvention | Semiconductor device and the method for manufacturing semiconductor device |
| abstract | The present invention relates to semiconductor device and the method for manufacturing semiconductor device.In the first recess（Gate trench）Basal surface and the lower part of side surface form the first lower insulating film, and it is than gate insulator thickness.The upper end of first lower insulating film is connected to the lower end of gate insulating film.In the second recess（Terminate groove）Basal surface and side surface lower part on form the second lower insulating film.Upper portion insulating film is formed at the top of the side surface of the second recess, and lower end is connected to the upper end of the second lower insulating film.The depth of second recess be greater than or equal to the first recess depths 90% and less than or equal to its 110%.The thickness of second lower insulating film be greater than or equal to the first lower insulating film thickness 95% and less than or equal to its 105%.Upper portion insulating film is than gate insulator thickness. |
| priorityDate | 2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419547108 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6384 |
Total number of triples: 25.