http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103972056-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2014-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103972056-B |
| titleOfInvention | Method for forming self-aligned double-layer graph |
| abstract | The invention provides a method for forming a self-alignment double-layer graph. The method includes the following steps that a semiconductor substrate is provided, a silicon oxide layer, a polycrystalline silicon layer, silicon nitride layers, a bottom anti-reflection layer and a photoresist layer are sequentially formed on the semiconductor substrate, and the photoresist layer is exposed and developed; the bottom anti-reflection layer and the silicon oxide layer are sequentially etched through an etching process until the upper surface of the polycrystalline silicon layer and the surface of the top of the silicon oxide layer are exposed; the silicon nitride layers are formed on the top and the surface of the side wall of an silicon oxide core graph and the upper surface of the polycrystalline silicon layer; the silicon nitride layers on the surface of the top of the silicon oxide core graph and the upper surface of the polycrystalline silicon layer are removed; the silicon oxide core graph is removed, and the polycrystalline silicon layer and the silicon nitride layers are etched with silicon nitride side walls as blocking layers; the top silicon nitride side wall is removed, and the self-aligned double-layer graph is formed. Through the method, the shape of the side wall of a finally-formed etched graph is stable. |
| priorityDate | 2014-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.