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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-205
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filingDate 2014-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103966560-B
titleOfInvention The manufacture method of Infra Red reflective films
abstract The present invention relates to the manufacture method of Infra Red reflective films, this manufacture method includes following operation in order: metal level formation process, at the upper masking metal level (25) of transparent film substrate (10);Metal oxide layer formation process, by d.c. sputtering masking face side metal oxide layer (22) on metal level (25) in the way of directly connecting;And, protective clear layer formation process, face side metal oxide layer (22) is formed protective clear layer (30).In metal oxide layer formation process, the sputtering target used in DC sputtering preferably contains zinc atom and tin atom and by least one metal oxide in zinc oxide and tin oxide and target that is metal powder sintered and that obtain.In face side metal oxide formation process, to sputtering masking indoor importing non-active gas and oxygen.Oxygen concentration in the gas that sputtering masking room imports is preferably 8 below volume %.
priorityDate 2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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