http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103928307-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103928307-B |
| titleOfInvention | The forming method of transistor, the forming method of high-K gate dielectric layer |
| abstract | The forming method of a kind of transistor, the forming method of high-K gate dielectric layer, wherein, the forming method of described high-K gate dielectric layer includes: provide the reaction chamber with plasma source gas, places Semiconductor substrate on the base station surface of described reaction chamber；The plasma source gas in reaction chamber is made to form plasma；Being passed through reactant in the reaction chamber with plasma, described reactant includes hafnium hydroxide, zirconium hydroxide and nitrogen；Reactant described in plasma bombardment, forms the high-K gate dielectric layer covering described semiconductor substrate surface, and the material of described high-K gate dielectric layer is the oxygen zirconium hafnium of nitrating.The processing step forming high-K gate dielectric layer is simple, and the quality of high-K gate dielectric layer is good, and heatproof carrier ability is strong. |
| priorityDate | 2013-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.