http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103928297-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2013-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103928297-B |
| titleOfInvention | Controllable preparation method of germanium-silicon nano lower-dimension structure and germanium-silicon nano lower-dimension structure |
| abstract | The invention discloses a controllable preparation method of a germanium-silicon nano lower-dimension structure and the germanium-silicon nano lower-dimension structure. The controllable preparation method comprises the following steps of (a) cleaning a silicon substrate; (b) forming germanium-silicon alloy on the silicon substrate in an epitaxial growth mode to form an epitaxial substrate; (c) spreading electron resist and exposing the required germanium-silicon nano lower-dimension structure graph on the electron resist through the electron beam photolithography; (d) transferring the germanium-silicon nano lower-dimension structure graph to the epitaxial substrate through dry etching to obtain a sample; (e) removing the electron resist on the sample; (f) performing oxidation and anneal under a high-temperature environment to enable oxygen to react with silicon preferentially to form silicon oxide and germanium to be separated out; (g) performing anneal in a nitrogen and hydrogen mixing atmosphere to form the germanium-silicon nano lower-dimension structure. By means of the controllable preparation method, controllable preparation of the germanium-silicon nano lower-dimension structure in dimension, shape, position and component is achieved. Furthermore, the controllable preparation method has the advantages of being low in process difficulty, high in repeatability and capable of performing large-scale integration easily. |
| priorityDate | 2013-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.