| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51ea83920fa687e50007860670ffd5ef |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-15 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-17 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate |
2012-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_864f6c8a01908ea621c171bf3e974285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46acaa986d286b005329c4782b89a4f8 |
| publicationDate |
2014-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-103907215-A |
| titleOfInvention |
Organic thin film transistors and method of making them |
| abstract |
An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate electrode; and a gate dielectric between the organic semiconductor layer and the gate dielectric. The surface- modification layers consist essentially of a partially fluorinated fullerene. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111247653-A |
| priorityDate |
2011-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |