http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103887390-B
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
filingDate | 2014-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2017-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2017-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-103887390-B |
titleOfInvention | The preparation method of graphical sapphire substrate and preparation method thereof, epitaxial wafer |
abstract | The invention discloses a kind of graphical sapphire substrate and preparation method thereof, the preparation method of epitaxial wafer, belong to semiconductor light technical field.There are multiple projections on the patterned surface of the Sapphire Substrate, the multiple projection is periodic pattern array, and the projection is platform body structure, each described raised top is fluted.The projection that the present invention passes through the formation platform body structure in sapphire substrate surface, and groove is set at the top of each projection, because convex top is very small, growth can directly be closed at raised top using the epitaxial wafer of laterally overgrown method, so that forming the interfacial gap of air between gallium nitride layer and Sapphire Substrate, air as lowest refractive index material, light is set to be difficult to be transmitted in gallium nitride, air, Sapphire Substrate interface and be more easy to be reflected, reflectivity higher can be produced, so as to improve the light extraction efficiency of light emitting diode. |
priorityDate | 2014-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.