| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad2cd796f8c4dcb425ddcc68707d3444 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-024 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04 |
| filingDate |
2012-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c12ca1e38fc0eac0349dfdf39d8162e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b43d5ac9c03fbddc4bc4326821f6ea29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a6c827b460ac00bf834b3a61786549a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29443535012df7c9e730bd5d4c0ddd91 |
| publicationDate |
2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-103875042-A |
| titleOfInvention |
Transparent conductive film |
| abstract |
[Problem] To provide a transparent conductive film which has low resistivity and good wet heat resistance and wherein patterning is inconspicuous since the film thickness of a conductive film is suppressed to a certain value or less. [Solution] A transparent conductive film which is configured to contain a transparent conductive thin film layer, while using a plastic film as the base. This transparent conductive film satisfies all of the following conditions (1)-(4). (1) The transparent conductive thin film layer is formed of a crystalline indium-tin complex oxide which contains tin oxide in an amount from 5.5% by mass to 8% by mass (inclusive). (2) The transparent conductive thin film layer has a film thickness of from 20 nm to 31 nm (inclusive). (3) The transparent conductive thin film layer has a surface resistivity of 110 ohm/- or less. (4) The resistivity increase ratio after storage at 85 DEG C at 85% RH for 240 hours is 1.2 times or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112912238-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107615223-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108292183-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11676739-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115053012-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108292183-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115053012-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115862929-A |
| priorityDate |
2011-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |