http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103858211-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31774 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31762 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-147 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-305 |
| filingDate | 2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103858211-B |
| titleOfInvention | Electron beam lithography device and photoetching method |
| abstract | The present invention forms the square grid matrix beam group in the two dimensional surface being spaced apart beam dimensions integral multiple, the grid that opening/closing treats the element of photoetching is beaten by bit map signal, repair desired beam shape, it is partial to need position by wave beam, after wave beam is in stable condition, open all choppers, obtain high accuracy and photoengraving pattern at a high speed by irradiating wave beam。It is supplied to open/closed signal and the vector scan signal of each wave beam, after wave beam is stable, releases all choppers, and thus carry out the photoetching of high accuracy, high speed with minority data volume。When entirety shooting quantity exceedes certain value, revise pattern data and realize high speed photoetching。Quasiconductor reverse bias PN junction technology is preferably used for indivedual shading electrode。 |
| priorityDate | 2011-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.