| abstract |
The present invention relates to a semiconductor device and a method for manufacturing the same, which impart stable electrical characteristics to a transistor using an oxide semiconductor film. In addition, excellent electrical characteristics are imparted to the transistor using the oxide semiconductor film. In addition, the present invention provides a highly reliable semiconductor device including the transistor. Regarding a transistor having a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film, the multilayer film is provided so as to overlap the gate electrode via the gate insulating film, and the multilayer film has The shape of the first angle formed by the lower surface of the oxide semiconductor film and the side surface of the oxide semiconductor film, and the shape of the second angle formed by the lower surface of the oxide film and the side surface of the oxide film, and the first angle is smaller than the second angle and is set as an acute angle. In addition, a semiconductor device is manufactured by using the transistor. |