| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2013-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9c19e167e27bd15378735a2f6cd039f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeb1071f7876583b8383cf8df07c7cd4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba46b5e71ce482a371ebe249c9c4d5d0 |
| publicationDate |
2014-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-103824778-A |
| titleOfInvention |
Transistors from vertical stacking of carbon nanotube thin films |
| abstract |
The present invention relates to transistors from vertical stacking of carbon nanotube thin films. A carbon nanotube field-effect transistor is disclosed. The carbon nanotube field-effect transistor includes a first carbon nanotube film, a first gate layer coupled to the first carbon nanotube film and a second carbon nanotube film coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first carbon nanotube film as well as to influence an electric field of the second carbon nanotube film. At least one of a source contact and a drain contact are coupled to the first and second carbon nanotube film and are separated from the first gate layer by an underlap region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104103692-A |
| priorityDate |
2012-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |