| abstract |
Disclose a kind of semiconductor device and a kind of method of manufacture semiconductor device.The method includes：The MOSFET with first grid length is formed in the semiconductor substrate；And the 2nd MOSFET with second gate length is formed in the semiconductor substrate, wherein second gate length is long less than the first grid, wherein, the 2nd MOSFET has the grid stacking of side wall form, the grid stacking includes grid conductor and gate-dielectric, and grid conductor is separated by gate-dielectric with Semiconductor substrate. |