http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103794688-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_795cb009fbe52eb9be778ed97897534c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49b16c3e13b6d4ca9ae36c5ddbfd8ee4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be59671dcee08513da11cc93c7e09c2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0f0effe8e010c193874049d15d119df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75d9f41ad5f8e7862b015d261633dc42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7e99e9ae04dfd031256359a2e0a0422 |
| publicationDate | 2014-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103794688-A |
| titleOfInvention | Preparation method of a photonic crystal structure GaN-based LED |
| abstract | A method for preparing a GaN-based LED with a photonic crystal structure relates to an LED device. 1) Evaporate a transparent conductive layer on the surface of the GaN-based LED epitaxial wafer; 2) Grow a mask layer on the transparent conductive layer grown in step 1); 3) Apply imprint on the mask layer grown in step 2) Glue, using a hard template for direct nanoimprinting, forming nanostructures on the surface of the colloid after demoulding; 4) Removing the residual glue on the epitaxial wafer; 5) Etching the epitaxial wafer to remove the mask layer that is not covered by the imprinting glue part, that is, to copy the nanostructure of the imprinting glue onto the mask layer; 6) remove all residual imprinting glue on the surface of the mask layer; 7) vapor-deposit the same transparent conductive layer as described in step 1) again on the surface of the epitaxial wafer; 8) Remove the residual mask layer on the surface of the epitaxial wafer, and obtain the photonic crystal structure on the transparent conductive layer; 9) Use the traditional process to obtain the photonic crystal structure GaN-based LED with the photonic crystal structure obtained in the above steps. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108831902-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108831902-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108732652-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108428769-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110656311-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113488573-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113488573-A |
| priorityDate | 2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.