http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103794553-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00095 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 |
| filingDate | 2013-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103794553-B |
| titleOfInvention | For manufacturing the method for electric plating through hole in the substrate and there is the substrate of electric plating through hole |
| abstract | The present invention provides a kind of method for manufacturing electric plating through hole in the substrate and the substrate with electric plating through hole.The method has steps of：Etching stopping layer is formed on the front side of substrate；Mask is formed on the back side of substrate；Ring-shaped groove is formed in the substrate, and ring-shaped groove extends up to front side by etch process in the case where using mask from back side, and the etch process stops at etching stopping layer, and wherein groove surrounds substrate pillar；In the case where using mask, in the deposited metal layer on the back side of substrate, wherein metal layer intrusion ring-shaped groove and it is deposited on substrate pillar；By the metal silicide layer at least partly metal layer being converted on substrate pillar, metal silicide layer is formed on substrate pillar；Selectively remove the remainder of metal layer；And the closed ring groove on the back side of substrate. |
| priorityDate | 2012-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.