http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103789738-B
Outgoing Links
Predicate | Object |
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classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
filingDate | 2014-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2016-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2016-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-103789738-B |
titleOfInvention | WO3cluster-beam deposition system and utilize it to prepare WO3the method of thin film |
abstract | The invention discloses a kind of WO 3 Cluster-beam deposition system and utilize it to prepare WO 3 The method of thin film, comprises the steps: 1), select WO 3 Ceramic target is as sputtering target material;2) it is fixed on the substrate pedestal of fine vacuum settling chamber after, substrate being cleaned;3), utilize mechanical pump and molecular pump forvacuum, make the vacuum pressure of settling chamber less than or equal to 1 × 10 ‑5 Pa;4), in cluster source chamber sidewall pipeline, it is passed through liquid nitrogen, it is passed through noble gas Ar gas and He gas respectively by sputter gas entrance and buffer gas entrance, the pressure making cluster source chamber reaches 100~500Pa, using shielding power supply, the W ion sputtered and O ion are continually colliding with He atom in cluster source chamber by air accumulation method and gradually grow into WO 3 Cluster;5) WO formed 3 Orientation Cluster Beam aligning substrate starts deposition, and sedimentation rate is 0.1~0.5/s, and sedimentation time is 10~30 minutes, forms the WO that thickness is 100~200 nanometers on substrate 3 Clusters Films;6) WO obtained 3 Clusters Films is annealed 5~10 minutes at 400~600 DEG C through rapid thermal processing system. |
priorityDate | 2014-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.