http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103779424-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| filingDate | 2014-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103779424-B |
| titleOfInvention | A kind of amorphous gallium nitride or indium nitride thin film transistor and its preparation method |
| abstract | The invention relates to a preparation method and application field of a functional thin film, in particular to an amorphous gallium nitride or indium nitride thin film transistor and a preparation method thereof. Using plasma chemical vapor deposition technology, using organic sources and ammonia as reaction sources; using hydrogen or nitrogen as organic carrier gas sources, and using silane and trimethylmagnesium as dopants, respectively prepare n-type, P-type amorphous gallium nitride or indium nitride; and n-type, p-type amorphous gallium nitride or indium nitride film as the channel layer of the thin film transistor, the amorphous gallium nitride produced by this method Or indium nitride thin film and amorphous gallium nitride or indium nitride thin film transistor are obtained on cheap substrates, so the manufacturing cost is greatly reduced; the material of the present invention has high uniformity, low impurity content, device and substrate The method has the advantages of high adhesion to the bottom; in addition, the method of the invention has the advantages of simple and convenient operation and is suitable for large-area continuous production. |
| priorityDate | 2014-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.