| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0041 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50 |
| filingDate |
2012-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-103748696-B |
| titleOfInvention |
The method for processing semiconductor structure |
| abstract |
Included providing the chip for the semiconductor structure for including being grown in growth substrates according to the method for various embodiments of the present invention, which includes the group III-nitride luminescent layer being clipped between n-type region and p-type area.The chip is attached to the second substrate.The growth substrates are removed.After second substrate is bonded the wafer to, which is processed to multiple luminescent devices. |
| priorityDate |
2011-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |