| abstract |
Provided are a semiconductor structure, a forming method of the semiconductor structure, an SRAM memory unit and an SRAM memorizer. One semiconductor structure comprises at least two adjacent transistors formed on a semiconductor substrate, gate electrodes of two adjacent transistors, an opening defined by a doping area located between the gate electrodes of the adjacent transistors and a conductive layer covering the bottom and the side wall of the opening. The other semiconductor structure comprises a first transistor, a second transistor, an opening defined by an insulating layer, a gate electrode layer of the insulating layer exposed out of the first transistor, a doping area of the second transistor and a gate electrode of the second transistor, and a conductive layer covering the bottom and the side wall of the opening, wherein the first transistor and a second transistor which are formed on the semiconductor substrate, the insulating layer of the gate electrode of the first transistor only covers one part of the gate electrode away from the doping area of the second transistor. The SRAM memory unit and the SRAM memorizer comprise the semiconductor structure. The area of the semiconductor structure can be decreased. |