http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103715352-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2013-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103715352-B |
| titleOfInvention | Resistance variable memory structure and method of forming the same |
| abstract | The invention relates to a semiconductor structure comprising a resistance variable memory structure. The semiconductor structure also includes a conductive structure. A resistive variable memory structure is overlying the conductive structure. The resistance variable memory structure includes a first electrode over the conductive structure. The resistance variable layer is disposed over the first electrode. The cover layer is disposed over the resistance variable layer. The cover layer includes a first metal material. The second electrode is disposed over the cover layer. The second electrode includes a second metal material different from the first metal material. The invention also provides a resistance variable memory structure and a forming method thereof. |
| priorityDate | 2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.