| abstract |
The invention discloses semiconductor devices, method, semi-conductor device manufacturing method and solid camera head.The semiconductor devices includes：Semiconductor layer comprising active region；The semiconductor element formed using active region；Join domain, they are obtained so that the island-like shape isolated relative to active region metallizes by by some parts of semiconductor layer；Dielectric film, it is formed to cover a main surface side of semiconductor layer；Electrode, they are configured to be faced with semiconductor element and join domain, and the dielectric film is clipped between the electrode and the semiconductor element and the join domain；And contact site, they be connected to semiconductor element or join domain in the required part among each several part of electrode through dielectric film so as to be optionally formed in.The present invention can form desired circuit by selecting the arrangement of contact site to rather than rely on the mode for only making distribution roundabout, therefore, it is possible to realize the miniaturization of semiconductor devices. |