http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103700710-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2013-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103700710-B |
| titleOfInvention | IGZO thin film transistor (TFT)s and preparation method thereof |
| abstract | The invention discloses a kind of IGZO thin film transistor (TFT)s and preparation method thereof, wherein IGZO thin film transistor (TFT)s include substrate, in conjunction on the surface of a substrate grid and be covered in substrate and the silicide grids insulating layer of grid outer surface, wherein, silicide grids surface of insulating layer is by O 2 /N 2 The processing of O plasma bombardments, and by O 2 /N 2 Also stacking is combined with self-assembled monolayer layer on the silicide grids surface of insulating layer of O plasma bombardments processing.In this way, through O 2 /N 2 After O plasma bombardments, the defect state of silicide grids insulating layer of thin-film can be reduced, inhibit charge trap effect, and self-assembled monolayer layer makes the reduction of surface of insulating layer roughness, improves the interfacial property between insulating layer and active layer well, hinders charge and captured by boundary defect, improve the carrier mobility of device, threshold voltage is reduced, leakage current is reduced so that device performance is more stable. |
| priorityDate | 2013-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.