| abstract |
The present invention relates to semiconductor device.First contact, the second impurity range and the second low-concentration impurity region form Schottky-barrier diode.Second impurity range have with the first impurity range identical impurity concentration, and therefore can with formed the first impurity range identical processing in be formed.In addition, the second low-concentration impurity region have with the first low-concentration impurity region identical impurity concentration, and therefore can with formed the first low-concentration impurity region identical processing in be formed. |