http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103681671-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2013-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103681671-B |
| titleOfInvention | Semiconductor devices with tungsten gates electrode and its manufacturing method |
| abstract | The present invention provides the semiconductor devices and its manufacturing method of a kind of threshold voltage independently controlling NMOS and the threshold voltage of PMOS.It the described method comprises the following steps：Gate insulating film is formed on the NMOS area and PMOS area of semiconductor substrate；Carbon containing tungsten is formed on the gate insulating film on one in being formed in NMOS area and PMOS area；Carbon containing tungsten nitride is formed on the gate insulating film on another in being formed in PMOS area or NMOS area；Tungsten film is formed on carbon containing tungsten and carbon containing tungsten nitride；By carbon containing tungsten and carbon containing tungsten nitride after annealing；And etching tungsten film, carbon containing tungsten and carbon containing tungsten nitride, to form gate electrode in NMOS area and PMOS area. |
| priorityDate | 2012-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.