| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5671
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2013-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e14e5be18664ac20b58800fcc22111ea |
| publicationDate |
2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-103681352-A |
| titleOfInvention |
Method for manufacturing a semiconductor device |
| abstract |
The invention refers to a method for manufacturing a semiconductor device. The improvement of the reliability of a semiconductor device having a split gate type MONOS memory is implemented. An ONO film and a second polysilicon film are sequentially formed so as to fill between a first polysilicon film and a dummy gate electrode. Then, the dummy gate electrode is removed. Then, the top surfaces of the first and second polysilicon films are polished, thereby forming a memory gate electrode formed of the second polysilicon film at the sidewall of a control gate electrode formed of the first polysilicon film via the ONO film. As a result, the memory gate electrode high in perpendicularity of the sidewall, and uniform in film thickness is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105977254-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109427785-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105742288-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106571362-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105977254-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105742288-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106571362-B |
| priorityDate |
2012-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |