http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103646919-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1015 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2013-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103646919-B |
| titleOfInvention | The manufacture method of double damask structure |
| abstract | The invention discloses a kind of manufacture method of double damask structure, it comprises on semiconductor structure and forms groove; Form the through hole of groove both sides; Take metal mask layer as mask, the part low-dielectric constant layer under etching groove, forms circular arc type or hypotenuse type inclined-plane, and opens through hole, forms double damask structure; With containing CFn 4 gas and with high bias power, the low-dielectric constant layer with circular arc type or hypotenuse type inclined-plane is etched, formed Z-shaped inclined-plane.The present invention forms the low-dielectric constant layer edge with small size inclined-plane by preliminary treatment, etch to increase inclined-plane size further subsequently, finally obtain large scale inclined-plane, invention increases double damask structure subsequent deposition ability, and improve the reliability performance of semiconductor components and devices. |
| priorityDate | 2013-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.