http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103633029-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32155 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2012-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103633029-B |
| titleOfInvention | Semiconductor structure and manufacturing method thereof |
| abstract | The invention provides a method for manufacturing a semiconductor structure, the method comprising: a method for manufacturing a semiconductor structure, comprising: a) forming gate lines extending in one direction on a substrate; b) forming a light grid covering the semiconductor structure a resist layer, patterning the photoresist layer to form an opening across the gate line; c) implanting ions into the gate line through the opening, so that the gate line is insulated at the opening. The present invention retains the complete gate line when forming the electrically isolated gate, and does not cause defects in the prior art in the subsequent process of forming the dielectric layer, thereby ensuring the quality of the semiconductor device. In addition, the present invention also provides a semiconductor structure formed according to the method provided in the present invention. |
| priorityDate | 2012-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.