http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103633028-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4925 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate | 2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103633028-B |
| titleOfInvention | Semiconductor element and preparation method thereof |
| abstract | One embodiment of the invention provides a kind of semiconductor element and preparation method thereof, and wherein the method includes: providing the first polysilicon layer of one first conduction type on a substrate, substrate has one first and one second active area；The part of correspondence second active area of the first polysilicon layer is carried out one first ion implantation technology, and use the alloy of one second conduction type, second conduction type is in contrast to the first conduction type, and in the first ion implantation technology, import silane plasma body with formation one second polysilicon layer on the first polysilicon layer, and the first conduction type of the part of corresponding for the first polysilicon layer the second active area is converted into the second conduction type；And pattern first and second polysilicon layer to form first grid layer and the second grid layer of corresponding second active area of corresponding first active area.Use technique scheme, it is possible to the problem solving to make the polysilicon layer in semiconductor element lose because of ion implantation technology. |
| priorityDate | 2012-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.