http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103632940-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103632940-B |
| titleOfInvention | A kind of manufacture method of semiconductor device |
| abstract | The invention provides a kind of manufacture method of semiconductor device, comprising: Semiconductor substrate is provided, form a gate dielectric layer and a gate material layers on the semiconductor substrate successively; Etch described gate dielectric layer and described gate material layers, to form dummy gate structure; Side wall construction is formed in the both sides of described dummy gate structure; Remove described dummy gate structure, between described side wall construction, form gate groove; Molecular beam epitaxial process is adopted to form a boundary layer in described gate groove; A high k dielectric layer and a workfunction layers is formed successively in described gate groove; Implement the backfill of metal gate; Perform a process of lapping, to remove the metal gate, workfunction layers, high k dielectric layer and the boundary layer that are formed in described gate groove outside.According to the present invention, adopt molecular beam epitaxial process to form described boundary layer, obtained by the ratio adjusting oxygen and silicon and meet SiOn 2 the silica of stoicheiometry, thus the quality ensureing described boundary layer, can also control heat budget simultaneously. |
| priorityDate | 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.