http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103631092-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-46 |
| filingDate | 2012-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103631092-B |
| titleOfInvention | The forming method of semiconductor structure |
| abstract | A kind of forming method of semiconductor structure, including：Semiconductor substrate is provided, the semiconductor substrate surface has device layer；Anti-reflection film is formed in the device layer surface, the anti-reflection film contains fluorinated polymer；Thermal annealing is carried out to the anti-reflection film, the anti-reflection film is formed the first anti-reflecting layer positioned at the device layer surface and the barrier layer positioned at the first anti-reflecting layer surface；After thermal annealing, photoresist layer is formed in the barrier layer surface, the photoresist layer defines the position for needing etching.The forming method of semiconductor structure can reduce the pollution of photoresist layer, improve the pattern precision of photoresist layer. |
| priorityDate | 2012-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.