http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103620788-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2012-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103620788-B |
| titleOfInvention | Use PECVD SiO2The method that passivation protection (passivation) manufactures indium gallium zinc oxide (IGZO) and zinc oxide (ZNO) thin film transistor (TFT) |
| abstract | The present invention is generally related to a kind of method for manufacturing thin film transistor (TFT).Thin film transistor (TFT) has includes the active channel of indium gallium zinc oxide (IGZO) or zinc oxide.After source electrode and drain electrode is formed, but before protective layer or etching stopping layer are deposited thereon, the active channel is exposed to nitrous oxide (N 2 O) plasma or oxygen gas plasma.During source electrode and drain electrode is formed, the interface between active channel and protective layer or etching stopping layer can change or damage.Nitrous oxide plasma or oxygen gas plasma change and repair the interface between active channel and protective layer or etching stopping layer. |
| priorityDate | 2011-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.