http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103594354-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2013-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103594354-B |
| titleOfInvention | A kind of manufacture method of dielectric layer |
| abstract | The invention discloses the manufacture method of a kind of dielectric layer, in turn include the following steps: (1) provides Semiconductor substrate, deposits the first silicon dioxide layer on a semiconductor substrate；(2) in the environment of dry oxygen, substrate is heated, so that the first silicon dioxide layer surface portion forms the silicon dioxide layer of densification；(3) deposit silicon nitride layer on fine and close silicon dioxide layer；(4) by forming the second silicon dioxide layer with thermal oxidation technology in dry oxygen environment on silicon nitride layer surface；(5) on the second silicon dioxide layer, the 3rd silicon dioxide layer is deposited. |
| priorityDate | 2013-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.