http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103590014-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 |
| filingDate | 2013-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103590014-B |
| titleOfInvention | The method of oxygen-doped hydrogenation non crystal silicon film efficient passivation silicon/crystalline silicon heterojunction solar battery silicon chip |
| abstract | The invention discloses a kind of method of oxygen-doped hydrogenation non crystal silicon film efficient passivation silicon/crystalline silicon heterojunction solar battery silicon chip.Use the method for plasma auxiliary chemical vapor deposition, adopt SiHn 4 , COn 2 and Hn 2 oxygen-doped hydrogenation non crystal silicon film deposition is carried out with passivation crystal silicon surface as source of the gas.After can making passivation, the recombination rate of silicon chip surface is reduced to below 10cm/s, even lower than 1cm/s; Implied? Voc is more than 730mV; And compared to simple hydrogenation non crystal silicon film passivation, the passivation effect of oxygen-doped film is comparatively mild with changes in process parameters fluctuation, is conducive to the control accuracy reducing production technique in big area and continuous seepage, reduces costs. |
| priorityDate | 2013-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.