http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103579315-B

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
filingDate 2012-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103579315-B
titleOfInvention Semiconductor device and its manufacture method
abstract The invention discloses a kind of semiconductor device, including:Multiple fins, on substrate and extend in a first direction;Multiple gate stack structures, extend and span each fin in a second direction;Multiple stressor layers, in the fin of gate stack structure both sides, and have multiple source-drain areas in stressor layers;Multiple channel regions, are located between multiple source-drain areas in the first direction;It is characterized in that, multiple gate stack structures cinctures enclose multiple channel regions.According to semiconductor device and its manufacture method of the present invention, corrode the fin at channel region place with reference to break-through and be formed self-aligned loopful around nano wire metal multiple-grid using hard mask and false grid, enhanced device performance.
priorityDate 2012-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 26.