http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103579075-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2012-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103579075-B |
| titleOfInvention | Semiconductor structure using plasma to control feature size and manufacturing method thereof |
| abstract | The invention relates to a semiconductor structure using plasma to control the feature size and a manufacturing method thereof. During the shallow trench isolation process, by adjusting the plasma used for etching the first trench, the first trench can be etched. A passivation layer is formed on the sidewall. Therefore, when the width of the hard mask layer is constant after etching, the increase in the thickness of the passivation layer on both sides of the hard mask layer is used to adjust the ACT feature size; The width distance of the second trench formed by etching (ie, the ADI feature size) is adjusted so that the finished semiconductor structure meets the relevant requirements of the wafer electrical test (WAT). In the present invention, it is not necessary to design a new photomask and use an optical proximity correction method (OPC) to realize the adjustment of the ACT feature size, which saves a lot of time and money. |
| priorityDate | 2012-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.