http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103579074-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate | 2012-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2016-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2016-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-103579074-B |
titleOfInvention | The forming method of semiconductor structure |
abstract | A kind of forming method of semiconductor structure, including: providing Semiconductor substrate, described Semiconductor substrate has first area and second area;Form the first material layer covering described semiconductor substrate surface;The first material surface in first area forms the second material layer, and the first material layer of first area and the second material layer constitute stacked structure;The first material surface at stacked structure and second area forms mask layer;Adopting the first plasma etch process to etch described first material layer, form the 3rd opening exposing described semiconductor substrate surface, stacked structure described in etching segment thickness, forms some 4th openings simultaneously;Adopting the second plasma etch process to etch described Semiconductor substrate, form the first groove, etch described stacked structure and Semiconductor substrate simultaneously, form some second grooves, the second depth of groove is less than the degree of depth of the first groove.First groove and the same etch step of the second groove are formed, and technical process is simple. |
priorityDate | 2012-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.