http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103545243-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2013-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103545243-B |
| titleOfInvention | A kind of forming method of fleet plough groove isolation structure |
| abstract | The invention provides the forming method of a kind of fleet plough groove isolation structure, after forming the first oxide layer by SACVD technique, perform dry etch process and eliminate the fragile face of the first oxide layer, then the second oxide layer is formed again through SACVD technique, the isolation effect of the fleet plough groove isolation structure being consequently formed is good, comprise the good stability of the semiconductor device of fleet plough groove isolation structure, be not susceptible to electric leakage, puncture.It addition, increase hydrogen passivation technique, described hydrogen passivation technique can eliminate the unsaturated bond of film surface, so that the sedimentation rate of subsequent technique is stable, and finally improves film gauge uniformity.Additionally, adopt oxygen gas plasma to process technique, O2 plasma is utilized effectively to be removed by the hydrogen bond on body structure surface and top layer, to eliminate the Q-time effect of successive process sedimentation rate, so that it is more stable before successive process deposits. |
| priorityDate | 2013-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.