http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103541011-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-22 |
| filingDate | 2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103541011-B |
| titleOfInvention | The method of the accurate single crystal of a kind of growing RE BCO high-temperature superconductor |
| abstract | The invention discloses the method for the accurate single crystal of a kind of growing RE BCO high-temperature superconductor, comprise following operation: powder a) preparing RE123 phase and RE211 phase; B) by RE123+(0.3 ~ 1.5) wt%CeOn 2 proportioning prepare the first presoma; C) by RE123+30mol%RE211+(0.3 ~ 1.5) wt%CeOn 2 proportioning prepare the second presoma; C) seed crystal is placed on the upper surface of the second presoma, and the second presoma is placed on the upper surface of the first presoma; D) by operation c) gained sample is placed in growth furnace and carries out melting texture growing high-temperature superconductor block.The present invention is simple to operate, by adding RE211 phase in the second precursor, effectively suppressing dissolving and the diffusion of thin film seed rare earth elements under high temperature fused state, improving the thermostability of thin film seed, be conducive to the accurate single crystal of induced growth REBCO high-temperature superconductor. |
| priorityDate | 2013-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 13.