http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103523827-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-48 |
| filingDate | 2013-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103523827-B |
| titleOfInvention | There is the method for making of the dendritic titanium dioxide array of three-dimensional of swift electron transmission performance |
| abstract | The invention discloses a kind of method for making with the dendritic titanium dioxide array of three-dimensional of swift electron transmission performance, comprising: (1) adopts hydro thermal method depositing TiOn 2 the conductive substrates superficial growth of crystal seed layer has the 1-dimention nano TiO of swift electron transmission performancen 2 rod array; (2) to the 1-dimention nano TiO that step (1) obtainsn 2 after rod array carries out surface treatment, adopt the three-dimensional dendritic morphology of immersion method epitaxial growth thereon without Seed Layer; (3) to step (2) obtain the sample with three-dimensional dendritic morphology and carry out oxygen plasma cleaning, oxygen atmosphere sintering process successively, obtain three-dimensional dendritic TiOn 2 array nanostructure.Present invention process is simple to operate, with low cost, and controllability is strong, and institute obtains TiOn 2 array crystal boundary and defect less, there is high electron transfer rate and large specific area, can be used for the light anode of photoelectric device, and greatly improve the performance of device, have a good application prospect. |
| priorityDate | 2013-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.