http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103521738-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B22D19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B22D18-06 |
| filingDate | 2013-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103521738-B |
| titleOfInvention | The quick aluminising device and method of silicon carbide IGBT substrate framework vacuum hydraulic pressure |
| abstract | The invention discloses the quick aluminising device of a kind of silicon carbide IGBT substrate framework vacuum hydraulic pressure, it comprises upper punch, low punch and die cavity; Described die cavity comprises die cavity body and cavity; The die cavity body first half is provided with the aluminum alloy melt inlet be communicated with cavity, and die cavity body the latter half is provided with the vacuum pump interface be communicated with cavity; Described upper punch stretches into cavity from top to bottom, and the part that upper punch stretches into cavity is equipped with sealing ring; Described low punch stretches into cavity from the bottom to top, and the part that low punch stretches into cavity is also equipped with sealing ring; Described low punch end face is provided with the graphite frame for loading silicon carbide IGBT substrate framework; When upper punch closes aluminum alloy melt inlet, low punch containing vacuum pump interface, the distance between upper punch and low punch is 30mm ~ 40mm.Adopt this device can realize the quick aluminising of silicon carbide IGBT substrate framework and double-faced uniform covers aluminium. |
| priorityDate | 2013-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.